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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4512 DESCRIPTION With TO-220C package Complement to type 2SA1726 APPLICATIONS Audio and General Purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 120 80 6 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 6 Base current Collector dissipation Junction temperature Storage temperature TC=25ae 3 50 150 -55~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4512 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collertor output capacitance Transition frequency CONDITIONS IC=25mA; RBE= IC=5A; IB=0.2A VCB=120V ;IE=0 VEB=6V; IC=0 IC=2A ; VCE=4V f=1MHz; VCB=10V IE=-0.5A ; VCE=12V 50 110 20 pF MHz MIN 80 0.5 10 10 |I |I TYP. MAX UNIT V V A A SYMBOL V(BR)CEO VCE(sat) ICBO IEBO hFE COB fT Switching times ton tstg tf hFE Classifications O 50-100 P 70-140 TOR NDU ICO E SEM ANG INCH Turn-on time 0.16 2.60 Storage time Fall time VCC=30V; IC=3A IB1=-IB2=0.3A RL=10| 0.34 |I |I |I s s s Y 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4512 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4512 TOR NDU ICO E SEM ANG INCH 4 |
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